Infineon BSC100N03LSGXT

EU RoHS

Compliant

ECCN (US)

EAR99

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

OptiMOS

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

30

Maximum Gate Source Voltage (V)

±20

Maximum Continuous Drain Current (A)

13

Maximum Drain Source Resistance (MOhm)

10@10V

Typical Gate Charge @ Vgs (nC)

[email protected]|13@10V

Typical Gate Charge @ 10V (nC)

13

Typical Input Capacitance @ Vds (pF)

1100@15V

Maximum Power Dissipation (mW)

2500

Typical Fall Time (ns)

2.4

Typical Rise Time (ns)

2.6

Typical Turn-Off Delay Time (ns)

13

Typical Turn-On Delay Time (ns)

3

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

表面贴装

Package Height

1

Package Width

5.9

Package Length

5.15

PCB changed

8

Standard Package Name

SON

Supplier Package

TDSON EP

Lead Shape

No Lead

包装

卷带

零件状态

Obsolete

引脚数量

8

配置

单四漏三源

信道型

N