Infineon BSC884N03MSGATMA1

Typical Input Capacitance @ Vds (pF)

2700@15V

Typical Gate Charge @ Vgs (nC)

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Maximum Drain Source Resistance (MOhm)

4.5@10V

Maximum Continuous Drain Current (A)

17

Maximum Gate Source Voltage (V)

±20

Maximum Drain Source Voltage (V)

30

Number of Elements per Chip

1

Channel Mode

Enhancement

Process Technology

OptiMOS

Category

功率MOSFET

PPAP

无

Automotive

无

ECCN (US)

EAR99

EU RoHS

符合免除

Maximum Power Dissipation (mW)

2500

Typical Fall Time (ns)

7.2

Typical Rise Time (ns)

6.8

Typical Turn-Off Delay Time (ns)

16

Typical Turn-On Delay Time (ns)

13

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

表面贴装

Package Height

1

Package Width

5.9

Package Length

5.15

PCB changed

8

Standard Package Name

SON

Supplier Package

TDSON EP

Lead Shape

No Lead

包装

卷带

零件状态

Obsolete

引脚数量

8

配置

单四漏三源

信道型

N