BSO119N03SXT详情
Infineon BSO119N03SXT重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
EU RoHS
Compliant
ECCN (US)
EAR99
Automotive
无
PPAP
无
Category
功率MOSFET
Process Technology
OptiMOS
Channel Mode
Enhancement
Number of Elements per Chip
1
Maximum Drain Source Voltage (V)
30
Maximum Gate Source Voltage (V)
±20
Maximum Continuous Drain Current (A)
9
Maximum Drain Source Resistance (mOhm)
11.9@10V
Typical Gate Charge @ Vgs (nC)
10@5V
Typical Input Capacitance @ Vds (pF)
1300@15V
Maximum Power Dissipation (mW)
1560
Typical Fall Time (ns)
2.8
Typical Rise Time (ns)
3.8
Typical Turn-Off Delay Time (ns)
18
Typical Turn-On Delay Time (ns)
4.3
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Mounting
表面贴装
Package Height
1.47
Package Width
3.94
Package Length
4.9
PCB changed
8
Standard Package Name
SOP
Supplier Package
DSO
Lead Shape
Gull-wing
包装
卷带
零件状态
Obsolete
引脚数量
8
配置
单四漏三源
信道型
N
BSO119N03SXT拓展信息
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies








哦! 它是空的。