Infineon BSO604NS2T

EU RoHS

Compliant

ECCN (US)

EAR99

HTS

8541.29.00.95

Category

功率MOSFET

Process Technology

OptiMOS

Channel Mode

Enhancement

Number of Elements per Chip

2

Maximum Drain Source Voltage (V)

55

Maximum Gate Source Voltage (V)

±20

Maximum Continuous Drain Current (A)

5

Maximum Drain Source Resistance (MOhm)

35@10V

Typical Gate Charge @ Vgs (nC)

19.7@10V

Typical Gate Charge @ 10V (nC)

19.7

Typical Input Capacitance @ Vds (pF)

656@25V

Maximum Power Dissipation (mW)

2000

Typical Fall Time (ns)

8

Typical Rise Time (ns)

8

Typical Turn-Off Delay Time (ns)

52

Typical Turn-On Delay Time (ns)

9

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Supplier Temperature Grade

汽车

包装

卷带

零件状态

活跃

配置

双排双泄

信道型

N