Infineon BSO612CVNT

EU RoHS

不合规

ECCN (US)

EAR99

HTS

8541.29.00.95

Automotive

无

PPAP

无

Category

小信号

Process Technology

SIPMOS

Channel Mode

Enhancement

Number of Elements per Chip

2

Maximum Drain Source Voltage (V)

60

Maximum Gate Source Voltage (V)

±20

Maximum Continuous Drain Current (A)

3@N Channel|2@P Channel

Maximum Drain Source Resistance (MOhm)

120@10V@N Channel|300@10V@P Channel

Typical Gate Charge @ Vgs (nC)

10.3@10V@N Channel|10.5@10V@P Channel

Typical Gate Charge @ 10V (nC)

10.3@N Channel|10.5@P Channel

Typical Input Capacitance @ Vds (pF)

275@25V@N Channel|320@25V@P Channel

Maximum Power Dissipation (mW)

2000

Typical Fall Time (ns)

30@N Channel|95@P Channel

Typical Rise Time (ns)

35@N Channel|60@P Channel

Typical Turn-Off Delay Time (ns)

25@N Channel|145@P Channel

Typical Turn-On Delay Time (ns)

12@N Channel|15@P Channel

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

表面贴装

Package Height

1.5

Package Width

4

Package Length

5

PCB changed

8

Standard Package Name

SOP

Supplier Package

SO

Lead Shape

Gull-wing

零件状态

Obsolete

引脚数量

8

配置

双排双泄

信道型

N|P