BSO613SPVNT详情
Infineon BSO613SPVNT重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
EU RoHS
不合规
ECCN (US)
EAR99
HTS
8541.29.00.95
Automotive
无
PPAP
无
Category
小信号
Process Technology
SIPMOS
Channel Mode
Enhancement
Number of Elements per Chip
1
Maximum Drain Source Voltage (V)
60
Maximum Gate Source Voltage (V)
±20
Maximum Continuous Drain Current (A)
3.44
Maximum Drain Source Resistance (MOhm)
130@10V
Typical Gate Charge @ Vgs (nC)
20@10V
Typical Gate Charge @ 10V (nC)
20
Typical Input Capacitance @ Vds (pF)
700@25V
Maximum Power Dissipation (mW)
2500
Typical Fall Time (ns)
12
Typical Rise Time (ns)
11
Typical Turn-Off Delay Time (ns)
32
Typical Turn-On Delay Time (ns)
10
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Mounting
表面贴装
Package Height
1.5
Package Width
4
Package Length
5
PCB changed
8
Standard Package Name
SOP
Supplier Package
SO
Lead Shape
Gull-wing
零件状态
Obsolete
引脚数量
8
配置
单四漏三源
信道型
P
BSO613SPVNT拓展信息
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies








哦! 它是空的。