BSP149E6327T详情
Infineon BSP149E6327T重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
ECCN (US)
EAR99
HTS
8541.29.00.75
Automotive
有
PPAP
Unknown
Category
小信号
Process Technology
SIPMOS
Channel Mode
Depletion
Number of Elements per Chip
1
Maximum Drain Source Voltage (V)
200
Maximum Gate Source Voltage (V)
±20
Maximum Continuous Drain Current (A)
0.66
Maximum Drain Source Resistance (MOhm)
1800@10V
Typical Gate Charge @ Vgs (nC)
11@5V
Typical Input Capacitance @ Vds (pF)
326@25V
Maximum Power Dissipation (mW)
1800
Typical Fall Time (ns)
21
Typical Rise Time (ns)
3.4
Typical Turn-Off Delay Time (ns)
45
Typical Turn-On Delay Time (ns)
5.1
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Mounting
表面贴装
Package Height
1.6
Package Width
3.5
Package Length
6.5
PCB changed
3
Tab
Tab
Standard Package Name
SOT
Supplier Package
SOT-223
Lead Shape
Gull-wing
包装
卷带
零件状态
Unconfirmed
引脚数量
4
配置
单排双泄
信道型
N
BSP149E6327T拓展信息
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies








哦! 它是空的。