Infineon BSP315PL6327T

EU RoHS

Compliant

ECCN (US)

EAR99

HTS

8541.29.00.75

Automotive

有

PPAP

Unknown

Category

小信号

Process Technology

SIPMOS

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

60

Maximum Gate Source Voltage (V)

±20

Maximum Gate Threshold Voltage (V)

2

Maximum Continuous Drain Current (A)

1.17

Maximum Drain Source Resistance (mOhm)

800@10V

Typical Gate Charge @ Vgs (nC)

5.2@10V

Typical Gate Charge @ 10V (nC)

5.2

Typical Gate to Drain Charge (nC)

1.8

Typical Gate to Source Charge (nC)

0.7

Typical Reverse Recovery Charge (nC)

36000

Typical Input Capacitance @ Vds (pF)

130@25V

Typical Output Capacitance (pF)

40

Maximum Power Dissipation (mW)

1800

Typical Fall Time (ns)

19

Typical Rise Time (ns)

9

Typical Turn-Off Delay Time (ns)

32

Typical Turn-On Delay Time (ns)

24

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

表面贴装

Package Height

1.6

Package Width

3.5

Package Length

6.5

PCB changed

3

Tab

Tab

Standard Package Name

SOT

Supplier Package

SOT-223

Lead Shape

Gull-wing

包装

卷带

零件状态

Obsolete

引脚数量

4

配置

单排双泄

信道型

P