Infineon BSP372E6327T

EU RoHS

Compliant

ECCN (US)

EAR99

HTS

8541.29.00.75

Category

小信号

Process Technology

SIPMOS

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

100

Maximum Gate Source Voltage (V)

±14

Maximum Gate Threshold Voltage (V)

2

Maximum Continuous Drain Current (A)

1.7@Ta=28C

Maximum Drain Source Resistance (MOhm)

310@5V

Typical Reverse Recovery Charge (nC)

110

Typical Input Capacitance @ Vds (pF)

415@25V

Typical Output Capacitance (pF)

80

Maximum Power Dissipation (mW)

1800

Typical Fall Time (ns)

50

Typical Rise Time (ns)

35

Typical Turn-Off Delay Time (ns)

110

Typical Turn-On Delay Time (ns)

20

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

RoHS

Non-Compliant

包装

卷带

零件状态

Obsolete

配置

单排双泄

信道型

N