Infineon BSP615S2LXT

EU RoHS

Compliant

ECCN (US)

EAR99

Automotive

Unknown

PPAP

Unknown

Category

功率MOSFET

Process Technology

OptiMOS

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

55

Maximum Gate Source Voltage (V)

±20

Maximum Continuous Drain Current (A)

2.8

Maximum Drain Source Resistance (MOhm)

90@10V

Typical Gate Charge @ Vgs (nC)

7.5@10V

Typical Gate Charge @ 10V (nC)

7.5

Typical Input Capacitance @ Vds (pF)

249@25V

Maximum Power Dissipation (mW)

1800

Typical Fall Time (ns)

23

Typical Rise Time (ns)

24

Typical Turn-Off Delay Time (ns)

22

Typical Turn-On Delay Time (ns)

7.8

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

表面贴装

Package Height

1.6

Package Width

3.5

Package Length

6.5

PCB changed

3

Tab

Tab

Standard Package Name

SOT

Supplier Package

SOT-223

Lead Shape

Gull-wing

包装

卷带

零件状态

Obsolete

引脚数量

4

配置

单排双泄

信道型

N