BSS119E6327XT详情
Infineon BSS119E6327XT重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
引脚数
3
EU RoHS
Compliant
ECCN (US)
EAR99
HTS
8541.21.00.95
Automotive
无
PPAP
无
Category
小信号
Process Technology
SIPMOS
Channel Mode
Enhancement
Number of Elements per Chip
1
Maximum Drain Source Voltage (V)
100
Maximum Gate Source Voltage (V)
±20
Maximum Gate Threshold Voltage (V)
2.3
Maximum Continuous Drain Current (A)
0.17
Maximum Drain Source Resistance (mOhm)
6000@10V
Typical Gate Charge @ Vgs (nC)
1.67@10V
Typical Gate Charge @ 10V (nC)
1.67
Typical Input Capacitance @ Vds (pF)
60@25V
Maximum Power Dissipation (mW)
360
Typical Fall Time (ns)
27
Typical Rise Time (ns)
3.1
Typical Turn-Off Delay Time (ns)
9.3
Typical Turn-On Delay Time (ns)
2.7
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Mounting
表面贴装
Package Height
1(Max)
Package Width
1.3
Package Length
2.9
PCB changed
3
Standard Package Name
SOT
Supplier Package
SOT-23
Lead Shape
Gull-wing
Voltage Rating (DC)
100 V
RoHS
Compliant
包装
卷带
零件状态
Obsolete
额定电流
170 mA
引脚数量
3
配置
Single
上升时间
5 ns
漏源电压 (Vdss)
100 V
连续放电电流(ID)
170 mA
输入电容
78 pF
信道型
N
无铅
无铅
BSS119E6327XT拓展信息
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies








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