Infineon BSS123E6327T

EU RoHS

Compliant

ECCN (US)

EAR99

Category

小信号

Process Technology

SIPMOS

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

100

Maximum Gate Source Voltage (V)

±20

Maximum Continuous Drain Current (A)

0.17

Maximum Drain Source Resistance (mOhm)

6000@10V

Typical Gate Charge @ Vgs (nC)

1.78@10V

Typical Gate Charge @ 10V (nC)

1.78

Typical Input Capacitance @ Vds (pF)

55@25V

Maximum Power Dissipation (mW)

360

Typical Fall Time (ns)

25

Typical Rise Time (ns)

3.1

Typical Turn-Off Delay Time (ns)

9.9

Typical Turn-On Delay Time (ns)

2.7

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Supplier Temperature Grade

汽车

包装

卷带

零件状态

Obsolete

配置

Single

信道型

N