BSS123E6433XT详情
Infineon BSS123E6433XT重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
引脚数
3
EU RoHS
Compliant
ECCN (US)
EAR99
HTS
8541.21.00.95
Automotive
有
PPAP
Unknown
Category
小信号
Process Technology
SIPMOS
Channel Mode
Enhancement
Number of Elements per Chip
1
Maximum Drain Source Voltage (V)
100
Maximum Gate Source Voltage (V)
±20
Maximum Gate Threshold Voltage (V)
1.8
Maximum Continuous Drain Current (A)
0.17
Maximum Drain Source Resistance (MOhm)
6000@10V
Typical Gate Charge @ Vgs (nC)
1.78@10V
Typical Gate Charge @ 10V (nC)
1.78
Typical Input Capacitance @ Vds (pF)
55@25V
Maximum Power Dissipation (mW)
360
Typical Fall Time (ns)
25
Typical Rise Time (ns)
3.1
Typical Turn-Off Delay Time (ns)
9.9
Typical Turn-On Delay Time (ns)
2.7
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Supplier Temperature Grade
汽车
Mounting
表面贴装
Package Height
1(Max)
Package Width
1.3
Package Length
2.9
PCB changed
3
Standard Package Name
SOT
Supplier Package
SOT-23
Lead Shape
Gull-wing
RoHS
Compliant
包装
卷带
零件状态
Obsolete
引脚数量
3
配置
Single
信道型
N
BSS123E6433XT拓展信息
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies








哦! 它是空的。