Infineon BSS123L6433XT

底架

表面贴装

引脚数

3

EU RoHS

Compliant

ECCN (US)

EAR99

Automotive

有

PPAP

Unknown

Category

小信号

Process Technology

SIPMOS

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

100

Maximum Gate Source Voltage (V)

±20

Maximum Gate Threshold Voltage (V)

1.8

Maximum Continuous Drain Current (A)

0.17

Maximum Drain Source Resistance (mOhm)

6000@10V

Typical Gate Charge @ Vgs (nC)

1.78@10V

Typical Gate Charge @ 10V (nC)

1.78

Typical Gate to Drain Charge (nC)

0.77

Typical Gate to Source Charge (nC)

0.055

Typical Reverse Recovery Charge (nC)

10.5

Typical Input Capacitance @ Vds (pF)

55@25V

Typical Output Capacitance (pF)

8.5

Maximum Power Dissipation (mW)

360

Typical Fall Time (ns)

25

Typical Rise Time (ns)

3.1

Typical Turn-Off Delay Time (ns)

9.9

Typical Turn-On Delay Time (ns)

2.7

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

表面贴装

Package Height

1(Max)

Package Width

1.3

Package Length

2.9

PCB changed

3

Standard Package Name

SOT

Supplier Package

SOT-23

Lead Shape

Gull-wing

Number of Elements

1

RoHS

Compliant

包装

卷带

零件状态

Obsolete

最高工作温度

150 °C

最小工作温度

-55 °C

引脚数量

3

配置

Single

功率耗散

360 mW

连续放电电流(ID)

170 mA

栅极至源极电压(Vgs)

20 V

信道型

N