Infineon BSS131H6327HTSA1

EU RoHS

Compliant

ECCN (US)

EAR99

HTS

8541.21.00.95

Category

小信号

Process Technology

SIPMOS

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

240

Maximum Gate Source Voltage (V)

±20

Maximum Continuous Drain Current (A)

0.11

Maximum Drain Source Resistance (MOhm)

14000@10V

Typical Gate Charge @ Vgs (nC)

2.1@10V

Typical Gate Charge @ 10V (nC)

2.1

Typical Input Capacitance @ Vds (pF)

58@25V

Maximum Power Dissipation (mW)

360

Typical Fall Time (ns)

64.5

Typical Rise Time (ns)

3.1

Typical Turn-Off Delay Time (ns)

13.7

Typical Turn-On Delay Time (ns)

3.3

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Supplier Temperature Grade

汽车

包装

卷带

零件状态

活跃

配置

Single

信道型

N