Infineon BSS670S2LXT

引脚数

3

EU RoHS

Compliant

ECCN (US)

EAR99

HTS

8541.21.00.95

Automotive

有

PPAP

Unknown

Category

功率MOSFET

Process Technology

OptiMOS

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

55

Maximum Gate Source Voltage (V)

±20

Maximum Continuous Drain Current (A)

0.54

Maximum Drain Source Resistance (MOhm)

650@10V

Typical Gate Charge @ Vgs (nC)

1.7@10V

Typical Gate Charge @ 10V (nC)

1.7

Typical Input Capacitance @ Vds (pF)

56@25V

Maximum Power Dissipation (mW)

360

Typical Fall Time (ns)

24

Typical Rise Time (ns)

25

Typical Turn-Off Delay Time (ns)

21

Typical Turn-On Delay Time (ns)

9

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

表面贴装

Package Height

1(Max)

Package Width

1.3

Package Length

2.9

PCB changed

3

Standard Package Name

SOT

Supplier Package

SOT-23

Lead Shape

Gull-wing

Voltage Rating (DC)

55 V

RoHS

Compliant

包装

卷带

零件状态

Obsolete

额定电流

540 mA

引脚数量

3

配置

Single

上升时间

25 ns

漏源电压 (Vdss)

55 V

连续放电电流(ID)

540 mA

输入电容

75 pF

信道型

N

无铅

无铅