Infineon BSS83PL6327XT

表面安装

YES

终端数量

3

晶体管元件材料

SILICON

EU RoHS

Compliant

ECCN (US)

EAR99

Automotive

有

PPAP

Unknown

Category

小信号

Process Technology

SIPMOS

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

60

Maximum Gate Source Voltage (V)

±20

Maximum Gate Threshold Voltage (V)

2

Maximum Continuous Drain Current (A)

0.33

Maximum Drain Source Resistance (mOhm)

2000@10V

Typical Gate Charge @ Vgs (nC)

2.38@10V

Typical Gate Charge @ 10V (nC)

2.38

Typical Gate to Drain Charge (nC)

1.1

Typical Gate to Source Charge (nC)

0.12

Typical Reverse Recovery Charge (nC)

37.5

Typical Input Capacitance @ Vds (pF)

62@25V

Typical Output Capacitance (pF)

19

Maximum Power Dissipation (mW)

360

Typical Fall Time (ns)

61

Typical Rise Time (ns)

71

Typical Turn-Off Delay Time (ns)

56

Typical Turn-On Delay Time (ns)

23

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Supplier Temperature Grade

汽车

Mounting

表面贴装

Package Height

1(Max)

Package Width

1.3

Package Length

2.9

PCB changed

3

Standard Package Name

SOT

Supplier Package

SOT-23

Lead Shape

Gull-wing

Package Description

SMALL OUTLINE, R-PDSO-G3

Package Style

小概要

Package Body Material

PLASTIC/EPOXY

Reflow Temperature-Max (s)

40

Manufacturer Part Number

BSS83PL6327XT

Package Shape

RECTANGULAR

Manufacturer

Infineon Technologies AG

Number of Elements

1

Part Life Cycle Code

Obsolete

Ihs Manufacturer

INFINEON TECHNOLOGIES AG

Risk Rank

5.65

Drain Current-Max (ID)

0.33 A

包装

卷带

JESD-609代码

e3

零件状态

Obsolete

ECCN 代码

EAR99

端子表面处理

哑光锡

附加功能

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

HTS代码

8541.21.00.95

端子位置

DUAL

终端形式

鸥翼

峰值回流焊温度（摄氏度）

260

Reach合规守则

unknown

引脚数量

3

JESD-30代码

R-PDSO-G3

资历状况

不合格

配置

Single

操作模式

增强型MOSFET

极性/通道类型

P-CHANNEL

漏极-源极导通最大电阻

2 Ω

DS 击穿电压-最小值

60 V

信道型

P

场效应管技术

METAL-OXIDE SEMICONDUCTOR

反馈上限-最大值 (Crss)

9 pF