Infineon BSZ042N06NSXT

EU RoHS

Compliant

ECCN (US)

EAR99

HTS

8541.29.00.95

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

OptiMOS

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

60

Maximum Gate Source Voltage (V)

±20

Maximum Continuous Drain Current (A)

40

Maximum Drain Source Resistance (MOhm)

4.2@10V

Typical Gate Charge @ Vgs (nC)

27@10V

Typical Gate Charge @ 10V (nC)

27

Typical Input Capacitance @ Vds (pF)

2000@30V

Maximum Power Dissipation (mW)

2500

Typical Fall Time (ns)

6

Typical Rise Time (ns)

7

Typical Turn-Off Delay Time (ns)

19

Typical Turn-On Delay Time (ns)

10

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

表面贴装

Package Height

1

Package Width

3.3

Package Length

3.3

PCB changed

8

Standard Package Name

SON

Supplier Package

TSDSON EP

Lead Shape

No Lead

包装

卷带

零件状态

Unconfirmed

引脚数量

8

配置

单四漏三源

信道型

N