Infineon BTS110E3045AT

EU RoHS

不合规

ECCN (US)

EAR99

HTS

8541.29.00.95

SVHC

有

SVHC Exceeds Threshold

有

Category

功率MOSFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

100

Maximum Gate Source Voltage (V)

±20

Maximum Continuous Drain Current (A)

10

Maximum Drain Source Resistance (MOhm)

200@10V

Typical Input Capacitance @ Vds (pF)

450@25V

Maximum Power Dissipation (mW)

40000

Typical Fall Time (ns)

55

Typical Rise Time (ns)

45

Typical Turn-Off Delay Time (ns)

70

Typical Turn-On Delay Time (ns)

20

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

RoHS

Non-Compliant

包装

卷带

零件状态

Obsolete

配置

Single

信道型

N