Infineon BTS244ZE3062AT

EU RoHS

符合免除

ECCN (US)

EAR99

HTS

8541.29.00.95

SVHC

有

SVHC Exceeds Threshold

有

Category

功率MOSFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

55

Maximum Gate Source Voltage (V)

±20

Maximum Gate Threshold Voltage (V)

2

Maximum Continuous Drain Current (A)

35

Maximum Gate Source Leakage Current (nA)

100

Maximum IDSS (uA)

1

Maximum Drain Source Resistance (MOhm)

13@10V

Typical Gate Charge @ Vgs (nC)

85@10V

Typical Gate Charge @ 10V (nC)

85

Typical Input Capacitance @ Vds (pF)

2130@25V

Maximum Power Dissipation (mW)

170000

Typical Fall Time (ns)

25

Typical Rise Time (ns)

70

Typical Turn-Off Delay Time (ns)

40

Typical Turn-On Delay Time (ns)

15

Minimum Operating Temperature (°C)

-40

Maximum Operating Temperature (°C)

175

Supplier Temperature Grade

汽车

包装

卷带

零件状态

活跃

配置

Single

信道型

N