Infineon BUY25CS45B-01(P)

EU RoHS

符合免除

ECCN (US)

EAR99

Automotive

无

PPAP

无

Category

功率MOSFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

250

Maximum Gate Source Voltage (V)

±20

Maximum Gate Threshold Voltage (V)

4

Maximum Continuous Drain Current (A)

45

Maximum Gate Source Leakage Current (nA)

100

Maximum IDSS (uA)

25

Maximum Drain Source Resistance (mOhm)

50@10V

Typical Gate Charge @ Vgs (nC)

100(Max)@10V

Typical Gate Charge @ 10V (nC)

100(Max)

Typical Input Capacitance @ Vds (pF)

6500(Max)@100V

Maximum Power Dissipation (mW)

208000

Typical Fall Time (ns)

75(Max)

Typical Rise Time (ns)

95(Max)

Typical Turn-Off Delay Time (ns)

80(Max)

Typical Turn-On Delay Time (ns)

50(Max)

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

零件状态

活跃

配置

Single

信道型

N