Infineon BUZ111S-E3045A

引脚数

3

EU RoHS

符合免除

ECCN (US)

EAR99

HTS

8541.29.00.95

SVHC

有

SVHC Exceeds Threshold

有

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

SIPMOS

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

55

Maximum Gate Source Voltage (V)

±20

Maximum Continuous Drain Current (A)

80

Maximum Drain Source Resistance (MOhm)

8@10V

Typical Gate Charge @ Vgs (nC)

125@10V

Typical Gate Charge @ 10V (nC)

125

Typical Input Capacitance @ Vds (pF)

3600@25V

Maximum Power Dissipation (mW)

300000

Typical Fall Time (ns)

40

Typical Rise Time (ns)

30

Typical Turn-Off Delay Time (ns)

65

Typical Turn-On Delay Time (ns)

25

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

175

Mounting

表面贴装

Package Height

4.4

Package Width

9.25

Package Length

10

PCB changed

2

Tab

Tab

Standard Package Name

TO-263

Supplier Package

D2PAK

Lead Shape

Gull-wing

RoHS

Compliant

包装

卷带

零件状态

Obsolete

引脚数量

3

配置

Single

信道型

N