Infineon BUZ30AL3045AXT

EU RoHS

Compliant

ECCN (US)

EAR99

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

SIPMOS

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

200

Maximum Gate Source Voltage (V)

±20

Maximum Continuous Drain Current (A)

21

Maximum Drain Source Resistance (MOhm)

130@10V

Typical Input Capacitance @ Vds (pF)

1400@25V

Maximum Power Dissipation (mW)

125000

Typical Fall Time (ns)

90

Typical Rise Time (ns)

70

Typical Turn-Off Delay Time (ns)

250

Typical Turn-On Delay Time (ns)

30

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

表面贴装

PCB changed

2

Tab

Tab

Standard Package Name

TO-263

Supplier Package

D2PAK

包装

卷带

零件状态

Obsolete

引脚数量

3

配置

Single

信道型

N