Infineon BUZ31LXK

EU RoHS

Compliant

ECCN (US)

EAR99

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

SIPMOS

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

200

Maximum Gate Source Voltage (V)

±20

Maximum Gate Threshold Voltage (V)

2

Maximum Continuous Drain Current (A)

13.5

Maximum Drain Source Resistance (MOhm)

200@5V

Typical Input Capacitance @ Vds (pF)

1200@25V

Maximum Power Dissipation (mW)

95000

Typical Fall Time (ns)

65

Typical Rise Time (ns)

80

Typical Turn-Off Delay Time (ns)

210

Typical Turn-On Delay Time (ns)

25

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

通孔

Package Height

9.2

Package Width

4.4

Package Length

9.9

PCB changed

3

Tab

Tab

Standard Package Name

TO-220

Supplier Package

TO-220AB

Lead Shape

通孔

包装

Tube

零件状态

Obsolete

引脚数量

3

配置

Single

信道型

N