Infineon BUZ73XT

EU RoHS

Compliant

ECCN (US)

EAR99

Category

功率MOSFET

Process Technology

SIPMOS

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

200

Maximum Gate Source Voltage (V)

±20

Maximum Gate Threshold Voltage (V)

4

Maximum Continuous Drain Current (A)

7

Maximum Drain Source Resistance (mOhm)

400@10V

Typical Reverse Recovery Charge (nC)

600

Typical Input Capacitance @ Vds (pF)

400@25V

Typical Output Capacitance (pF)

85

Maximum Power Dissipation (mW)

40000

Typical Fall Time (ns)

30

Typical Rise Time (ns)

40

Typical Turn-Off Delay Time (ns)

55

Typical Turn-On Delay Time (ns)

10

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

零件状态

Obsolete

配置

Single

信道型

N