Infineon DATA-2N6849JANTX

EU RoHS

不合规

ECCN (US)

EAR99

HTS

8541.21.00.75

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

HEXFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

100

Maximum Gate Source Voltage (V)

±20

Maximum Gate Threshold Voltage (V)

4

Operating Junction Temperature (°C)

-55 to 150

Maximum Continuous Drain Current (A)

6.5

Maximum Gate Source Leakage Current (nA)

100

Maximum IDSS (uA)

25

Maximum Drain Source Resistance (MOhm)

320@10V

Typical Gate Charge @ Vgs (nC)

34.8(Max)@10V

Typical Gate Charge @ 10V (nC)

34.8(Max)

Typical Gate to Drain Charge (nC)

23.1(Max)

Typical Gate to Source Charge (nC)

6.8(Max)

Typical Input Capacitance @ Vds (pF)

800@25V

Typical Reverse Transfer Capacitance @ Vds (pF)

125@25V

Minimum Gate Threshold Voltage (V)

2

Typical Output Capacitance (pF)

350

Maximum Power Dissipation (mW)

25000

Typical Fall Time (ns)

140(Max)

Typical Rise Time (ns)

140(Max)

Typical Turn-Off Delay Time (ns)

140(Max)

Typical Turn-On Delay Time (ns)

60(Max)

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Supplier Temperature Grade

Military

Maximum Positive Gate Source Voltage (V)

20

Maximum Pulsed Drain Current @ TC=25°C (A)

25

Maximum Diode Forward Voltage (V)

4.3

Mounting

通孔

Package Height

4.54(Max)

PCB changed

3

Standard Package Name

TO-205-AF

Supplier Package

TO-39

Lead Shape

通孔

零件状态

活跃

引脚数量

3

配置

Single

信道型

P

直径

9.22(Max)