Infineon FP75R07N2E4_B11

表面安装

NO

终端数量

31

晶体管元件材料

SILICON

Manufacturer Part Number

FP75R07N2E4_B11

Approvals

UL

Manufacturer

Infineon

Pd - Power Dissipation

250 W

Maximum Operating Temperature

+ 150 C

Collector-Emitter Saturation Voltage

1.55 V

Unit Weight

6.349313 oz

Minimum Operating Temperature

- 40 C

Factory Pack QuantityFactory Pack Quantity

10

Continuous Collector Current at 25 C

75 A

Part # Aliases

SP000843294 FP75R07N2E4B11BOSA1

Brand

Infineon Technologies

RoHS

Details

Collector- Emitter Voltage VCEO Max

650 V

Package Description

FLANGE MOUNT, R-XUFM-X31

Package Style

FLANGE MOUNT

Package Body Material

UNSPECIFIED

Turn-on Time-Nom (ton)

45 ns

Turn-off Time-Nom (toff)

320 ns

Reflow Temperature-Max (s)

未说明

Operating Temperature-Max

175 °C

Rohs Code

有

Package Shape

RECTANGULAR

Number of Elements

7

Part Life Cycle Code

Obsolete

Ihs Manufacturer

INFINEON TECHNOLOGIES AG

Risk Rank

8.48

Part Package Code

MODULE

包装

Tray

无铅代码

无

ECCN 代码

EAR99

子类别

IGBTs

端子位置

UPPER

终端形式

UNSPECIFIED

峰值回流焊温度（摄氏度）

未说明

Reach合规守则

compliant

引脚数量

31

JESD-30代码

R-XUFM-X31

配置

3-Phase Inverter

箱体转运

ISOLATED

晶体管应用

电源控制

极性/通道类型

N-CHANNEL

产品类别

IGBT模块

最大耗散功率(Abs)

250 W

集电极电流-最大值(IC)

75 A

集电极-发射器电压-最大值

650 V

栅极-发射极电压-最大值

20 V

VCEsat-最大值

1.95 V

产品

IGBT硅模块

产品类别

IGBT模块