Infineon GRP-DATA-IRF5NJ9540SCS

材料

Si

EU RoHS

供应商未确认

ECCN (US)

EAR99

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

HEXFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

100

Maximum Gate Source Voltage (V)

±20

Maximum Gate Threshold Voltage (V)

4

Maximum Continuous Drain Current (A)

18

Maximum Gate Source Leakage Current (nA)

100

Maximum IDSS (uA)

25

Maximum Drain Source Resistance (MOhm)

117@10V

Typical Gate Charge @ Vgs (nC)

109(Max)@10V

Typical Gate Charge @ 10V (nC)

109(Max)

Typical Input Capacitance @ Vds (pF)

1340@25V

Maximum Power Dissipation (mW)

75000

Typical Fall Time (ns)

84(Max)

Typical Rise Time (ns)

135(Max)

Typical Turn-Off Delay Time (ns)

87(Max)

Typical Turn-On Delay Time (ns)

29(Max)

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

表面贴装

Package Height

2.61(Max)

Package Width

10.28(Max)

Package Length

7.64(Max)

PCB changed

3

Supplier Package

SMD-0.5

零件状态

活跃

引脚数量

3

配置

Single

信道型

P