Infineon GRP-DATA-IRHG6110SCS

EU RoHS

不合规

ECCN (US)

EAR99

Automotive

无

PPAP

无

Category

功率MOSFET

Channel Mode

Enhancement

Number of Elements per Chip

4

Maximum Drain Source Voltage (V)

100

Maximum Gate Source Voltage (V)

±20

Maximum Continuous Drain Current (A)

0.75@P Channel|1@N Channel

Maximum Drain Source Resistance (MOhm)

1200@12V@P Channel|700@12V@N Channel

Typical Gate Charge @ Vgs (nC)

15(Max)@12V@P Channel|11(Max)@12V@N Channel

Typical Input Capacitance @ Vds (pF)

335@25V@P Channel|300@25V@N Channel

Maximum Power Dissipation (mW)

1400

Typical Fall Time (ns)

51(Max)@P Channel|45(Max)@N Channel

Typical Rise Time (ns)

19(Max)@P Channel|16(Max)@N Channel

Typical Turn-Off Delay Time (ns)

66(Max)@P Channel|65(Max)@N Channel

Typical Turn-On Delay Time (ns)

22(Max)@P Channel|20(Max)@N Channel

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

通孔

Package Height

3.3(Max)

Package Width

7.74(Max)

Package Length

19.3(Max)

PCB changed

14

Standard Package Name

MO-036AB

Supplier Package

MO-036AB

零件状态

活跃

引脚数量

14

配置

Quad

信道型

P|N