Infineon GRP-DATA-IRHNS67264SCS

材料

Si

ECCN (US)

EAR99

Category

功率MOSFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

250

Maximum Gate Source Voltage (V)

±20

Maximum Continuous Drain Current (A)

50

Maximum Drain Source Resistance (MOhm)

40@12V

Typical Gate Charge @ Vgs (nC)

220(Max)@12V

Typical Input Capacitance @ Vds (pF)

6912@25V

Maximum Power Dissipation (mW)

250000

Typical Fall Time (ns)

50(Max)

Typical Rise Time (ns)

150(Max)

Typical Turn-Off Delay Time (ns)

100(Max)

Typical Turn-On Delay Time (ns)

50(Max)

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

配置

Single

信道型

N