Infineon GRP-DATA-IRHSNA57064SCS

材料

Si

EU RoHS

供应商未确认

ECCN (US)

ITAR

Automotive

无

PPAP

无

Category

功率MOSFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

60

Maximum Gate Source Voltage (V)

±20

Maximum Continuous Drain Current (A)

56

Maximum Drain Source Resistance (mOhm)

6.5@12V

Typical Gate Charge @ Vgs (nC)

160@12V

Maximum Power Dissipation (mW)

250000

Typical Fall Time (ns)

50(Max)

Typical Rise Time (ns)

125(Max)

Typical Turn-Off Delay Time (ns)

75(Max)

Typical Turn-On Delay Time (ns)

35(Max)

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

125

Mounting

表面贴装

Package Height

3.07(Max)

Package Width

17.65(Max)

Package Length

13.46(Max)

PCB changed

3

Supplier Package

SMD-2

零件状态

活跃

引脚数量

3

配置

Single

信道型

N