Infineon GRP-DATA-JANSF2N7524D4

ECCN (US)

EAR99

Automotive

无

PPAP

无

Category

功率MOSFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

60

Maximum Gate Source Voltage (V)

±20

Maximum Continuous Drain Current (A)

45

Maximum Drain Source Resistance (MOhm)

18@12V

Typical Gate Charge @ Vgs (nC)

160(Max)@12V

Typical Input Capacitance @ Vds (pF)

8040@25V

Maximum Power Dissipation (mW)

208000

Typical Fall Time (ns)

35(Max)

Typical Rise Time (ns)

150(Max)

Typical Turn-Off Delay Time (ns)

100(Max)

Typical Turn-On Delay Time (ns)

35(Max)

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Supplier Temperature Grade

Military

Mounting

通孔

Package Height

13.84(Max)

Package Width

6.6(Max)

Package Length

13.84(Max)

PCB changed

3

Supplier Package

TO-254AA

零件状态

活跃

引脚数量

3

配置

Single

信道型

P