Infineon GRP-DATA-JANSR2N7473U2
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GRP-DATA-JANSR2N7473U2详情
Infineon GRP-DATA-JANSR2N7473U2重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
EU RoHS
不合规
ECCN (US)
EAR99
Automotive
无
PPAP
无
Category
功率MOSFET
Channel Mode
Enhancement
Number of Elements per Chip
1
Maximum Drain Source Voltage (V)
200
Maximum Gate Source Voltage (V)
±20
Maximum Continuous Drain Current (A)
53.5
Maximum Drain Source Resistance (MOhm)
38@12V
Typical Gate Charge @ Vgs (nC)
155(Max)@12V
Typical Input Capacitance @ Vds (pF)
6044@25V
Maximum Power Dissipation (mW)
250000
Typical Fall Time (ns)
50(Max)
Typical Rise Time (ns)
125(Max)
Typical Turn-Off Delay Time (ns)
80(Max)
Typical Turn-On Delay Time (ns)
35(Max)
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Supplier Temperature Grade
Military
Mounting
表面贴装
Package Height
3.07(Max)
Package Width
17.65(Max)
Package Length
13.46(Max)
PCB changed
3
Standard Package Name
SMD
Supplier Package
SMD-2
零件状态
活跃
引脚数量
3
配置
Single
信道型
N
GRP-DATA-JANSR2N7473U2拓展信息
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies








哦! 它是空的。