Infineon GRP-DATA-JANSR2N7523U2S
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GRP-DATA-JANSR2N7523U2S详情
Infineon GRP-DATA-JANSR2N7523U2S重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
ECCN (US)
EAR99
Automotive
无
PPAP
无
Category
功率MOSFET
Channel Mode
Enhancement
Number of Elements per Chip
1
Maximum Drain Source Voltage (V)
30
Maximum Gate Source Voltage (V)
±20
Maximum Continuous Drain Current (A)
56
Maximum Drain Source Resistance (MOhm)
13@12V
Typical Gate Charge @ Vgs (nC)
220(Max)@12V
Typical Input Capacitance @ Vds (pF)
7844@25V
Maximum Power Dissipation (mW)
250000
Typical Fall Time (ns)
80(Max)
Typical Rise Time (ns)
175(Max)
Typical Turn-Off Delay Time (ns)
100(Max)
Typical Turn-On Delay Time (ns)
35(Max)
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Supplier Temperature Grade
Military
Mounting
表面贴装
Package Height
3.1(Max)
Package Width
13.46(Max)
Package Length
17.65(Max)
PCB changed
3
Supplier Package
TO-276AC
零件状态
活跃
引脚数量
3
配置
Single
信道型
P
GRP-DATA-JANSR2N7523U2S拓展信息
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
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哦! 它是空的。