Infineon GRP-DATA-JANSR2N7555U3

EU RoHS

供应商未确认

ECCN (US)

EAR99

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

R5

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

250(Min)

Maximum Gate Source Voltage (V)

±20

Maximum Gate Threshold Voltage (V)

4.5

Maximum Continuous Drain Current (A)

10

Maximum Gate Source Leakage Current (nA)

100

Maximum IDSS (uA)

10

Maximum Drain Source Resistance (MOhm)

400@12V

Typical Gate Charge @ Vgs (nC)

32(Max)@12V

Typical Input Capacitance @ Vds (pF)

1016@25V

Maximum Power Dissipation (mW)

75000

Typical Fall Time (ns)

30(Max)

Typical Rise Time (ns)

100(Max)

Typical Turn-Off Delay Time (ns)

35(Max)

Typical Turn-On Delay Time (ns)

25(Max)

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Supplier Temperature Grade

Military

Mounting

表面贴装

Package Height

2.61(Max)

Package Width

10.28(Max)

Package Length

7.64(Max)

PCB changed

3

Supplier Package

SMD-0.5

零件状态

活跃

引脚数量

3

配置

Single

信道型

N