IGO60R070D1AUMA2详情
Infineon IGO60R070D1AUMA2重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
包装/外壳
PG-DSO-20
Qualification
-
Continuous Drain Current Id
31A
Vds - Drain-Source Breakdown Voltage
800 V
Vgs th - Gate-Source Threshold Voltage
900 mV
Pd - Power Dissipation
125 W
Transistor Polarity
N-Channel
Maximum Operating Temperature
+ 150 C
Vgs - Gate-Source Voltage
- 10 V, + 10 V
Minimum Operating Temperature
- 55 C
Mounting Styles
SMD/SMT
Channel Mode
Enhancement
Qg - Gate Charge
5.8 nC
Rds On - Drain-Source Resistance
70 mOhms
Id - Continuous Drain Current
31 A
系列
CoolGaN 600V
技术
GaN
通道数量
1 Channel
信道型
N
IGO60R070D1AUMA2拓展信息
Infineon
Infineon
Infineon Technologies AG
Infineon Technologies AG
Infineon Technologies AG








哦! 它是空的。