Infineon IPB022N04LGXT

EU RoHS

Compliant

ECCN (US)

EAR99

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

OptiMOS 3

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

40

Maximum Gate Source Voltage (V)

±20

Maximum Continuous Drain Current (A)

90

Maximum Drain Source Resistance (mOhm)

2.2@10V

Typical Gate Charge @ Vgs (nC)

[email protected]|125@10V

Typical Gate Charge @ 10V (nC)

125

Typical Input Capacitance @ Vds (pF)

9900@20V

Maximum Power Dissipation (mW)

167000

Typical Fall Time (ns)

11

Typical Rise Time (ns)

9

Typical Turn-Off Delay Time (ns)

66

Typical Turn-On Delay Time (ns)

17

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

175

Mounting

表面贴装

Package Height

4.57(Max)

Package Width

9.45(Max)

Package Length

10.31(Max)

PCB changed

2

Tab

Tab

Standard Package Name

TO-263

Supplier Package

D2PAK

包装

卷带

零件状态

Obsolete

引脚数量

3

配置

Single

信道型

N