Infineon IPB041N04NGXT

EU RoHS

Compliant

Maximum Gate Source Voltage (V)

±20

Maximum Continuous Drain Current (A)

80

Maximum Drain Source Resistance (mOhm)

4.1@10V

Maximum Drain Source Voltage (V)

40

Number of Elements per Chip

1

Channel Mode

Enhancement

Process Technology

OptiMOS

Category

功率MOSFET

PPAP

无

Automotive

无

ECCN (US)

EAR99

Typical Gate Charge @ Vgs (nC)

42@10V

Typical Gate Charge @ 10V (nC)

42

Typical Input Capacitance @ Vds (pF)

3400@20V

Maximum Power Dissipation (mW)

94000

Typical Fall Time (ns)

4.8

Typical Rise Time (ns)

3.8

Typical Turn-Off Delay Time (ns)

23

Typical Turn-On Delay Time (ns)

16

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

175

Mounting

表面贴装

Package Height

4.57(Max)

Package Width

9.45(Max)

Package Length

10.31(Max)

PCB changed

2

Tab

Tab

Standard Package Name

TO-263

Supplier Package

D2PAK

Lead Shape

Gull-wing

包装

卷带

零件状态

Obsolete

引脚数量

3

配置

Single

信道型

N