Infineon IPB120N06NGXT

EU RoHS

符合免除

ECCN (US)

EAR99

SVHC

有

SVHC Exceeds Threshold

有

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

OptiMOS

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

60

Maximum Gate Source Voltage (V)

±20

Maximum Continuous Drain Current (A)

75

Maximum Drain Source Resistance (mOhm)

11.7@10V

Typical Gate Charge @ Vgs (nC)

46@10V

Typical Gate Charge @ 10V (nC)

46

Typical Input Capacitance @ Vds (pF)

1600@30V

Maximum Power Dissipation (mW)

158000

Typical Fall Time (ns)

26

Typical Rise Time (ns)

27

Typical Turn-Off Delay Time (ns)

34

Typical Turn-On Delay Time (ns)

14

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

175

Mounting

表面贴装

Package Height

4.4

Package Width

9.25

Package Length

10

PCB changed

2

Tab

Tab

Standard Package Name

TO-263

Supplier Package

D2PAK

Lead Shape

Gull-wing

包装

卷带

零件状态

Obsolete

引脚数量

3

配置

Single

信道型

N