Infineon IPB320N20N3GXT

EU RoHS

符合免除

ECCN (US)

EAR99

HTS

8541.29.00.95

SVHC

有

SVHC Exceeds Threshold

有

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

OptiMOS

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

200

Maximum Gate Source Voltage (V)

±20

Maximum Gate Threshold Voltage (V)

4

Operating Junction Temperature (°C)

-55 to 175

Maximum Continuous Drain Current (A)

34

Maximum Gate Source Leakage Current (nA)

100

Maximum IDSS (uA)

1

Maximum Drain Source Resistance (MOhm)

32@10V

Typical Gate Charge @ Vgs (nC)

22@10V

Typical Gate Charge @ 10V (nC)

22

Typical Gate to Drain Charge (nC)

3

Typical Gate to Source Charge (nC)

8

Typical Reverse Recovery Charge (nC)

500

Typical Switch Charge (nC)

5

Typical Input Capacitance @ Vds (pF)

1770@100V

Typical Reverse Transfer Capacitance @ Vds (pF)

4@100V

Minimum Gate Threshold Voltage (V)

2

Typical Output Capacitance (pF)

135

Maximum Power Dissipation (mW)

136000

Typical Fall Time (ns)

4

Typical Rise Time (ns)

9

Typical Turn-Off Delay Time (ns)

21

Typical Turn-On Delay Time (ns)

11

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

175

Maximum Pulsed Drain Current @ TC=25°C (A)

136

Maximum Junction Ambient Thermal Resistance on PCB (°C/W)

40

Typical Diode Forward Voltage (V)

0.9

Typical Gate Plateau Voltage (V)

4.4

Typical Reverse Recovery Time (ns)

110

Maximum Diode Forward Voltage (V)

1.2

Typical Gate Threshold Voltage (V)

3

Maximum Positive Gate Source Voltage (V)

20

Mounting

表面贴装

Package Height

4.4

Package Width

9.25

Package Length

10

PCB changed

2

Tab

Tab

Standard Package Name

TO-263

Supplier Package

D2PAK

Lead Shape

Gull-wing

包装

卷带

零件状态

Unconfirmed

引脚数量

3

配置

Single

信道型

N