IPB60R199CPZT详情
Infineon IPB60R199CPZT重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
Mounting
表面贴装
Package Height
4.4
Package Width
9.25
Package Length
10
PCB changed
2
Tab
Tab
Standard Package Name
TO-263
Supplier Package
D2PAK
Lead Shape
Gull-wing
Maximum Operating Temperature (°C)
150
Minimum Operating Temperature (°C)
-55
Typical Turn-On Delay Time (ns)
10
Typical Turn-Off Delay Time (ns)
50
Typical Rise Time (ns)
5
Typical Fall Time (ns)
5
Maximum Power Dissipation (mW)
139000
Typical Input Capacitance @ Vds (pF)
1520@100V
Typical Gate Charge @ 10V (nC)
32
Typical Gate Charge @ Vgs (nC)
32@10V
Maximum Drain Source Resistance (mOhm)
199@10V
Maximum Continuous Drain Current (A)
16
Maximum Gate Source Voltage (V)
±20
Maximum Drain Source Voltage (V)
650
Number of Elements per Chip
1
Channel Mode
Enhancement
Process Technology
CoolMOS
Category
功率MOSFET
PPAP
无
Automotive
无
SVHC Exceeds Threshold
有
SVHC
有
HTS
8541.29.00.95
ECCN (US)
EAR99
包装
卷带
零件状态
Unconfirmed
引脚数量
3
配置
Single
信道型
N
IPB60R199CPZT拓展信息
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies








哦! 它是空的。