Infineon IPB65R280E6XT

EU RoHS

符合免除

ECCN (US)

EAR99

SVHC

有

SVHC Exceeds Threshold

有

Category

功率MOSFET

Process Technology

CoolMOS

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

700

Maximum Gate Source Voltage (V)

20

Maximum Continuous Drain Current (A)

13.8

Maximum Drain Source Resistance (MOhm)

280@10V

Typical Gate Charge @ Vgs (nC)

45@10V

Typical Gate Charge @ 10V (nC)

45

Typical Input Capacitance @ Vds (pF)

950@100V

Maximum Power Dissipation (mW)

104000

Typical Fall Time (ns)

9

Typical Rise Time (ns)

9

Typical Turn-Off Delay Time (ns)

76

Typical Turn-On Delay Time (ns)

11

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

包装

卷带

零件状态

NRND

配置

Single

信道型

N