Infineon IPD038N04NGXT

EU RoHS

Compliant

ECCN (US)

EAR99

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

OptiMOS

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

40

Maximum Gate Source Voltage (V)

±20

Maximum Continuous Drain Current (A)

90

Maximum Drain Source Resistance (mOhm)

3.8@10V

Typical Gate Charge @ Vgs (nC)

42@10V

Typical Gate Charge @ 10V (nC)

42

Typical Input Capacitance @ Vds (pF)

3400@20V

Maximum Power Dissipation (mW)

94000

Typical Fall Time (ns)

5.2

Typical Rise Time (ns)

4.2

Typical Turn-Off Delay Time (ns)

20

Typical Turn-On Delay Time (ns)

17

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

175

Mounting

表面贴装

Package Height

2.3

Package Width

6.22

Package Length

6.5

PCB changed

2

Tab

Tab

Standard Package Name

TO-252

Supplier Package

DPAK

包装

卷带

零件状态

Obsolete

引脚数量

3

配置

Single

信道型

N