Infineon IPD053N06N3GXT

EU RoHS

Compliant

ECCN (US)

EAR99

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

OptiMOS

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

60

Maximum Gate Source Voltage (V)

±20

Maximum Continuous Drain Current (A)

90

Maximum Drain Source Resistance (mOhm)

5.3@10V

Typical Gate Charge @ Vgs (nC)

61@10V

Typical Gate Charge @ 10V (nC)

61

Typical Input Capacitance @ Vds (pF)

5000@30V

Maximum Power Dissipation (mW)

115000

Typical Fall Time (ns)

9

Typical Rise Time (ns)

68

Typical Turn-Off Delay Time (ns)

32

Typical Turn-On Delay Time (ns)

24

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

175

Mounting

表面贴装

Package Height

2.41(Max)

Package Width

6.22(Max)

Package Length

6.73(Max)

PCB changed

2

Tab

Tab

Standard Package Name

TO-252

Supplier Package

DPAK

Lead Shape

Gull-wing

包装

卷带

零件状态

Obsolete

引脚数量

3

配置

Single

信道型

N