Infineon IPD50N06S3-07

表面安装

YES

终端数量

2

晶体管元件材料

SILICON

EU RoHS

Compliant

ECCN (US)

EAR99

Automotive

有

PPAP

Unknown

Category

功率MOSFET

Process Technology

OptiMOS

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

55

Maximum Gate Source Voltage (V)

±20

Maximum Continuous Drain Current (A)

50

Maximum Drain Source Resistance (mOhm)

6.9@10V

Typical Gate Charge @ Vgs (nC)

110@10V

Typical Gate Charge @ 10V (nC)

110

Typical Input Capacitance @ Vds (pF)

7800@25V

Maximum Power Dissipation (mW)

136000

Typical Fall Time (ns)

73

Typical Rise Time (ns)

60

Typical Turn-Off Delay Time (ns)

45

Typical Turn-On Delay Time (ns)

30

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

175

Mounting

表面贴装

Package Height

2.3

Package Width

6.22

Package Length

6.5

PCB changed

2

Tab

Tab

Standard Package Name

TO-252

Supplier Package

DPAK

Package Description

SMALL OUTLINE, R-PSSO-G2

Package Style

小概要

Moisture Sensitivity Levels

1

Package Body Material

PLASTIC/EPOXY

Reflow Temperature-Max (s)

未说明

Operating Temperature-Max

175 °C

Rohs Code

有

Manufacturer Part Number

IPD50N06S3-07

Package Shape

RECTANGULAR

Manufacturer

Infineon Technologies AG

Number of Elements

1

Part Life Cycle Code

Obsolete

Ihs Manufacturer

INFINEON TECHNOLOGIES AG

Risk Rank

5.63

Part Package Code

TO-252

Drain Current-Max (ID)

50 A

零件状态

Obsolete

ECCN 代码

EAR99

附加功能

ULTRA-LOW RESISTANCE

HTS代码

8541.29.00.95

子类别

FET 通用电源

端子位置

SINGLE

终端形式

鸥翼

峰值回流焊温度（摄氏度）

未说明

Reach合规守则

unknown

引脚数量

3

JESD-30代码

R-PSSO-G2

资历状况

不合格

配置

Single

操作模式

增强型MOSFET

箱体转运

DRAIN

极性/通道类型

N-CHANNEL

JEDEC-95代码

TO-252

最大漏极电流 (Abs) (ID)

50 A

漏极-源极导通最大电阻

0.0069 Ω

脉冲漏极电流-最大值(IDM)

200 A

DS 击穿电压-最小值

55 V

信道型

N

雪崩能量等级（Eas）

710 mJ

场效应管技术

METAL-OXIDE SEMICONDUCTOR

最大耗散功率(Abs)

136 W