IPD65R380E6XT详情
Infineon IPD65R380E6XT重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
Package Height
2.41(Max)
Mounting
表面贴装
Maximum Operating Temperature (°C)
150
Minimum Operating Temperature (°C)
-55
Typical Turn-On Delay Time (ns)
10
Typical Turn-Off Delay Time (ns)
57
Typical Rise Time (ns)
7
Typical Fall Time (ns)
8
Maximum Power Dissipation (mW)
83000
Typical Input Capacitance @ Vds (pF)
710@100V
Typical Gate Charge @ 10V (nC)
39
Typical Gate Charge @ Vgs (nC)
39@10V
Maximum Drain Source Resistance (mOhm)
380@10V
Maximum Continuous Drain Current (A)
10.6
Maximum Gate Source Voltage (V)
20
Maximum Drain Source Voltage (V)
700
Number of Elements per Chip
1
Channel Mode
Enhancement
Process Technology
CoolMOS
Category
功率MOSFET
PPAP
Unknown
Automotive
Unknown
SVHC Exceeds Threshold
有
SVHC
有
HTS
8541.29.00.95
ECCN (US)
EAR99
EU RoHS
符合免除
Package Width
6.22(Max)
Package Length
6.73(Max)
PCB changed
2
Tab
Tab
Standard Package Name
TO-252
Supplier Package
DPAK
Lead Shape
Gull-wing
包装
卷带
零件状态
Unconfirmed
引脚数量
3
配置
Single
信道型
N
IPD65R380E6XT拓展信息
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies








哦! 它是空的。