Infineon IPD90N06S3L-05

表面安装

YES

终端数量

2

晶体管元件材料

SILICON

EU RoHS

Compliant

ECCN (US)

EAR99

Automotive

有

PPAP

Unknown

Category

功率MOSFET

Process Technology

OptiMOS

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

55

Maximum Gate Source Voltage (V)

±16

Maximum Continuous Drain Current (A)

90

Maximum Drain Source Resistance (mOhm)

5@10V

Typical Gate Charge @ Vgs (nC)

128@10V

Typical Gate Charge @ 10V (nC)

128

Typical Input Capacitance @ Vds (pF)

9400@25V

Maximum Power Dissipation (mW)

136000

Typical Fall Time (ns)

98

Typical Rise Time (ns)

57

Typical Turn-Off Delay Time (ns)

68

Typical Turn-On Delay Time (ns)

20

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

175

Mounting

表面贴装

Package Height

2.3

Package Width

6.22

Package Length

6.5

PCB changed

2

Tab

Tab

Standard Package Name

TO-252

Supplier Package

DPAK

Package Description

SMALL OUTLINE, R-PSSO-G2

Package Style

小概要

Moisture Sensitivity Levels

1

Package Body Material

PLASTIC/EPOXY

Rohs Code

有

Manufacturer Part Number

IPD90N06S3L-05

Package Shape

RECTANGULAR

Manufacturer

Infineon Technologies AG

Number of Elements

1

Part Life Cycle Code

Obsolete

Ihs Manufacturer

INFINEON TECHNOLOGIES AG

Risk Rank

5.64

Part Package Code

TO-252AA

Drain Current-Max (ID)

90 A

JESD-609代码

e3

零件状态

Obsolete

ECCN 代码

EAR99

端子表面处理

哑光锡

附加功能

ULTRA LOW RESISTANCE, LOGIC LEVEL COMPATIBLE

HTS代码

8541.29.00.95

端子位置

SINGLE

终端形式

鸥翼

Reach合规守则

unknown

引脚数量

3

JESD-30代码

R-PSSO-G2

资历状况

不合格

配置

Single

操作模式

增强型MOSFET

箱体转运

DRAIN

极性/通道类型

N-CHANNEL

JEDEC-95代码

TO-252AA

漏极-源极导通最大电阻

0.005 Ω

脉冲漏极电流-最大值(IDM)

360 A

DS 击穿电压-最小值

55 V

信道型

N

雪崩能量等级（Eas）

250 mJ

场效应管技术

METAL-OXIDE SEMICONDUCTOR