Infineon IPG20N06S3L23XT

EU RoHS

Compliant

ECCN (US)

EAR99

Automotive

有

PPAP

Unknown

Category

功率MOSFET

Process Technology

OptiMOS

Channel Mode

Enhancement

Number of Elements per Chip

2

Maximum Drain Source Voltage (V)

55

Maximum Gate Source Voltage (V)

±16

Maximum Continuous Drain Current (A)

20

Maximum Drain Source Resistance (MOhm)

23@10V

Typical Gate Charge @ Vgs (nC)

32@10V

Typical Gate Charge @ 10V (nC)

32

Typical Input Capacitance @ Vds (pF)

2270@25V

Maximum Power Dissipation (mW)

45000

Typical Fall Time (ns)

75

Typical Rise Time (ns)

35

Typical Turn-Off Delay Time (ns)

40

Typical Turn-On Delay Time (ns)

10

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

175

Mounting

表面贴装

Package Height

1

Package Width

5.9

Package Length

5.15

PCB changed

8

Standard Package Name

SON

Supplier Package

TDSON EP

Lead Shape

No Lead

包装

卷带

零件状态

Obsolete

引脚数量

8

配置

Dual

信道型

N