Infineon IPP80N06S208XK

EU RoHS

Compliant

ECCN (US)

EAR99

HTS

8541.29.00.95

Automotive

有

PPAP

Unknown

Category

功率MOSFET

Process Technology

OptiMOS

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

55

Maximum Gate Source Voltage (V)

±20

Maximum Continuous Drain Current (A)

80

Maximum Drain Source Resistance (MOhm)

8@10V

Typical Gate Charge @ Vgs (nC)

72@10V

Typical Gate Charge @ 10V (nC)

72

Typical Input Capacitance @ Vds (pF)

2860@25V

Maximum Power Dissipation (mW)

215000

Typical Fall Time (ns)

14

Typical Rise Time (ns)

15

Typical Turn-Off Delay Time (ns)

32

Typical Turn-On Delay Time (ns)

14

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

175

Mounting

通孔

Package Height

9.25

Package Width

4.4

Package Length

10

PCB changed

3

Tab

Tab

Standard Package Name

TO-220

Supplier Package

TO-220

Lead Shape

通孔

包装

Tube

零件状态

Unconfirmed

引脚数量

3

配置

Single

信道型

N