IPW60R099CS详情
Infineon IPW60R099CS重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
引脚数
3
EU RoHS
Compliant
ECCN (US)
EAR99
Automotive
无
PPAP
无
Category
功率MOSFET
Process Technology
CoolMOS
Channel Mode
Enhancement
Number of Elements per Chip
1
Maximum Drain Source Voltage (V)
600
Maximum Gate Source Voltage (V)
±20
Maximum Continuous Drain Current (A)
31
Maximum Drain Source Resistance (MOhm)
99@10V
Typical Gate Charge @ Vgs (nC)
60@10V
Typical Gate Charge @ 10V (nC)
60
Typical Input Capacitance @ Vds (pF)
2800@100V
Maximum Power Dissipation (mW)
255000
Typical Fall Time (ns)
5
Typical Rise Time (ns)
5
Typical Turn-On Delay Time (ns)
10
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Mounting
通孔
Package Height
20.95
Package Width
5.3
Package Length
15.9
PCB changed
3
Tab
Tab
Standard Package Name
TO-247
Supplier Package
TO-247
Lead Shape
通孔
RoHS
Compliant
零件状态
Unconfirmed
引脚数量
3
配置
Single
信道型
N
IPW60R099CS拓展信息
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies








哦! 它是空的。